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Preparation and electrical properties of ITO thin films by dip-coating process

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Abstract

Indium tin oxide (ITO) thin films were prepared on quartz glass substrates by a dip-coating process. The starting solution was prepared by mixing indium chloride dissolved in acetylacetone and tin chloride dissolved in ethanol. The ITO thin films containing 0 ∼ 20 mol% SnO2 were successfully prepared by heat-treatment at above 400 °C. Chemical stability of sol were investigated by using a FTIR spectrometer. The electrical resistivity of the thin films decreased with increasing heat-treatment temperature, that is carrier concentration increased, and mobility decreased with increasing SnO2 content. The ITO thin films containing 12 mol% SnO2 showed the minimum resistivity of ρ=1.2 × 10−3 (Ω cm). It also showed high carrier concentration of N=1.2 × 1020(cm−3) and mobility μH=7.0(cm2 V−1 s−1).

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Authors and Affiliations

  1. Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Science University of Tokyo, 2641, Yamazaki, Noda-shi, 278, Chiba, Japan

    Keishi Nishio, Tadanori Sei & Toshio Tsuchiya

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  1. Keishi Nishio
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  2. Tadanori Sei
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  3. Toshio Tsuchiya
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Nishio, K., Sei, T. & Tsuchiya, T. Preparation and electrical properties of ITO thin films by dip-coating process. Journal of Materials Science 31, 1761–1766 (1996). https://doi.org/10.1007/BF00372189

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  • DOI: https://doi.org/10.1007/BF00372189

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