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Study of intermixing and Zr-silicide formation using swift heavy ion irradiation

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Abstract

Swift heavy ion (SHI) beam induced irradiation is an established technique for investigating structural modifications in thin films depending on the S e sensitivity of material. Intermixing due to 120 MeV Au ion irradiation at different fluences from 1012 to 1014 ions/cm2 has been reported as a function of ion fluence in a-Si/Zr/a-Si thin films on Si substrate. The samples are characterized before (pristine) and after irradiation using Grazing Incident X-ray Diffraction (GIXRD) and Rutherford Backscattering Spectroscopy (RBS), which confirm the formation of ZrSi at thin film interface. It is suggested that mixing is mainly due to electronic energy loss since the energy transferred from high energy ions seems to create a transient molten zone along the ion track. It is found that the interface mixing increases linearly with the increase in ion fluence. The mixing effect explained in the framework of Thermal spike model. The irradiation effect on the surface roughness of the system is measured using Atomic Force Microscopy (AFM) technique. The current conduction mechanism and Schottky barrier height are also calculated by taking I–V curves across the Metal/Si junction.

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Authors and Affiliations

  1. Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur, 302004, India

    Garima Agarwal, Vaibhav Kulshrestha, Renu Dhunna & I. P. Jain

  2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    D. Kabiraj

  3. Institute of Physics, Sachivalaya Marg, Bhubaneswar, Orissa, 751005, India

    Shikha Verma

Authors
  1. Garima Agarwal
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  2. Vaibhav Kulshrestha
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  3. Renu Dhunna
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  4. D. Kabiraj
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  5. Shikha Verma
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  6. I. P. Jain
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Correspondence to Garima Agarwal.

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Agarwal, G., Kulshrestha, V., Dhunna, R. et al. Study of intermixing and Zr-silicide formation using swift heavy ion irradiation. Appl. Phys. A 99, 879–888 (2010). https://doi.org/10.1007/s00339-010-5631-2

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  • DOI: https://doi.org/10.1007/s00339-010-5631-2

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