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Strain accumulation in InAs/In x Ga1−x As quantum dots

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Abstract

The effect of strain accumulation in the InAs/In x Ga1−x As quantum dots (QDs) system was studied in this work. We found strain in the In x Ga1−x As layer with accumulation in the QD layer. This effect resulted in a dramatic reduction of growth-mode transition thickness of the QD layer. For InAs/In0.25Ga0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.

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Authors and Affiliations

  1. National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China

    Lu Wang, Wenxin Wang, Haitao Tian & Zhigang Xing

  2. School of Material Science and Technology, Harbin Institute of Technology, Harbin, China

    Lu Wang, Min Xiong & Liancheng Zhao

  3. School of Renewable Energy, North China Electric Power University, Beijing, 102206, China

    Meicheng Li

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  1. Lu Wang
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  2. Meicheng Li
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  3. Wenxin Wang
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  4. Haitao Tian
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Correspondence to Wenxin Wang.

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Wang, L., Li, M., Wang, W. et al. Strain accumulation in InAs/In x Ga1−x As quantum dots. Appl. Phys. A 104, 257–261 (2011). https://doi.org/10.1007/s00339-010-6120-3

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  • DOI: https://doi.org/10.1007/s00339-010-6120-3

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