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Third-harmonic generation from ZnO films deposited by MOCVD

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Abstract

Third-harmonic generation (THG) was studied from ZnO thin film deposited by the metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates at different temperatures. A strong THG signal was obtained from the film deposited at an appropriate temperature. The dependence of THG on the deposition temperatures was discussed. A third-order susceptibility χ(3)=3.77×10-12 esu was deduced for a film deposited at 250 °C. This value is similar to that observed from ZnO nanocrystalline films fabricated by pulse-laser deposition (PLD). We conclude that film structure and the crystalline quality is main factors determined the THG in the film.

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Authors and Affiliations

  1. Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai, 980-0845, Japan

    C.Y. Liu, B.P. Zhang, N.T. Binh & Y. Segawa

  2. Department of Physics, Tonghua Teachers College, Tonghua, Jilin, China

    C.Y. Liu

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  1. C.Y. Liu
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  2. B.P. Zhang
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  3. N.T. Binh
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  4. Y. Segawa
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Correspondence to C.Y. Liu.

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PACS

42.55. Sa; 77.80.-e; 42.55.Px

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Liu, C., Zhang, B., Binh, N. et al. Third-harmonic generation from ZnO films deposited by MOCVD. Appl. Phys. B 79, 83–86 (2004). https://doi.org/10.1007/s00340-004-1507-5

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  • DOI: https://doi.org/10.1007/s00340-004-1507-5

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