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Current versus gate voltage hysteresis in organic field effect transistors

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Abstract

Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device operation, besides long term stability, is the reproducibility of the current–voltage behavior, which may be affected by hysteresis phenomena. Hysteresis effects are often observed in organic transistors during sweeps of the gate voltage (V GS). This hysteresis can originate in various ways, but comparative scientific investigations are rare and a comprehensive picture of “hysteresis phenomena” in OFETs is still missing. This review provides an overview of the physical effects that cause hysteresis and discusses the importance of such effects in OFETs in a comparative manner.

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Acknowledgments

M.E. is grateful to Philipp Stadler (LIOS) and Robert Koeppe (http://www.isiQiri.com) for fruitful discussions. This work was performed within FWF project P20772-N20 of the Austrian Science Fund (FWF) National Research Network (NFN S9711), and COST action D35 as part of European Cooperation in the Field of Scientific and Technical Research.

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Authors and Affiliations

  1. Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, 4040, Linz, Austria

    Martin Egginger, Helmut Neugebauer & Niyazi Serdar Sariciftci

  2. Soft Matter Physics Department (SoMaP), Johannes Kepler University, 4040, Linz, Austria

    Siegfried Bauer & Reinhard Schwödiauer

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  1. Martin Egginger
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  2. Siegfried Bauer
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  3. Reinhard Schwödiauer
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  4. Helmut Neugebauer
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  5. Niyazi Serdar Sariciftci
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Correspondence to Martin Egginger.

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Egginger, M., Bauer, S., Schwödiauer, R. et al. Current versus gate voltage hysteresis in organic field effect transistors. Monatsh Chem 140, 735–750 (2009). https://doi.org/10.1007/s00706-009-0149-z

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  • DOI: https://doi.org/10.1007/s00706-009-0149-z

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