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Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs

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Abstract

Three-dimensional simulation based on a non-equilibrium Green’s function method including electron-phonon interaction and Si/SiO2 interface roughness has been performed for ultra-small FinFETs. Comparing the simulated drain-current–gate-voltage characteristics with those obtained in the ballistic limit, effects of the scatterings on the device characteristics are discussed. Threshold voltage fluctuation is also discussed.

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References

  1. H.-S.P. Wong, IBM J. Res. Dev., 46, 133 (2002).

    Google Scholar 

  2. J.P. Colinge, Solid-State Electron., 48, 897 (2004).

    Article  Google Scholar 

  3. J. Wang, E. Polizzi, and M. Lundstrom, IEDM Tech. Dig, 695 (2003).

  4. L. Chang, Y.-K. Choi, D. Ha, P. Rande, S. Xiong, J. Bokor, C. Hu, and T.-J. King, Proc. IEEE, 91, 1860 (2003).

    Google Scholar 

  5. J. Kedzierski, M. Ieong, E. Nowak, T.S. Kanarsky, Y. Zhang, R. Roy, D. Boyd, D. Fried, and H.-S. Philip Wong, IEEE Trans. Electron. Dev., 50, 952 (2003).

    Article  Google Scholar 

  6. J. Kretz, L. Dreeskornfeld, R. Schrö ter, E. Landgraf, F. Hofmann, and W. Rö sner Microelectron. Eng., 7374, 803 (2004).

    Article  Google Scholar 

  7. B.S. Doyle, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, R. Rios, and R. Chau, IEEE Electron. Dev. Lett., 24, 263 (2003).

    Article  Google Scholar 

  8. G.A. Kathawala, M. Mohamed, and U. Ravaioli, J. Comput. Electron., 2, 85 (2003).

    Article  Google Scholar 

  9. N. Mori, H. Momose, and C. Hamaguchi, Physica Status Solidi (b), 204, 268 (1997).

    Article  Google Scholar 

  10. A. Asenov, A.R. Brown, J.H. Davies, S. Kaya, and G. Slavcheva, IEEE Trans. Electron. Dev., 50, 1837 (2003).

    Article  Google Scholar 

  11. J. Fonseca and S. Kaya, Solid-State Electron., 48, 1843 (2004).

    Article  Google Scholar 

  12. S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge University Press, Cambridge, 1995).

    Google Scholar 

  13. R. Venugopal, S. Goasguen, S. Datta, and M.S. Lundstrom, J. Appl. Phys., 95, 292 (2004).

    Article  Google Scholar 

  14. H. Takeda and N. Mori International Conference on Solid State Devices and Material (Tokyo, Japan, Sept. 15–17, 2004).

  15. D.K. Ferry and S.M. Goodnick, Transport in nanostructures, (Cambridge University Press, Cambridge, 1997).

    Google Scholar 

  16. T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys, 54, 437 (1982).

    Article  Google Scholar 

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Correspondence to H. Takeda.

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Takeda, H., Mori, N. Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs. J Comput Electron 4, 31–34 (2005). https://doi.org/10.1007/s10825-005-7102-0

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  • DOI: https://doi.org/10.1007/s10825-005-7102-0

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