Abstract
Three-dimensional simulation based on a non-equilibrium Green’s function method including electron-phonon interaction and Si/SiO2 interface roughness has been performed for ultra-small FinFETs. Comparing the simulated drain-current–gate-voltage characteristics with those obtained in the ballistic limit, effects of the scatterings on the device characteristics are discussed. Threshold voltage fluctuation is also discussed.
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Takeda, H., Mori, N. Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs. J Comput Electron 4, 31–34 (2005). https://doi.org/10.1007/s10825-005-7102-0
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DOI: https://doi.org/10.1007/s10825-005-7102-0