Abstract
Porous silicon nanostructures have attracted a great deal of interest during the past few years, due to their many remarkable properties. The high-efficiency visible photo- and electro-luminescence of this material opened the way to the development of silicon-based optoelectronic devices fully compatible with standard industry processes. In addition to these luminescent properties, nanostructured porous silicon shows a variety of other interesting properties, including tunable refractive index, low light absorption in the visible, high internal surface, variable surface chemistry, or high chemical reactivity. All these properties, along with its ease of fabrication and the possibility of producing precisely controlled layered structures make this material adequate for its use in a wide range of fields, such as optics, micro- and optoelectronics, chemical sensing or biomedical applications, for example. This article reviews the applications of nanostructured porous silicon that exploit its unique optical properties, as in the case of light emitting devices, filtered photodetectors, optical sensors, and others.
Similar content being viewed by others
References
Canham LT (1990) Appl Phys Lett 57(10):1046
Halimaoui A, Oules C, Bromchil G, Bsiesy A, Gaspard F, Herino R, Ligeon M, Muller F (1991) Appl Phys Lett 59(3):304
Koshida N, Koyama H (1992) Appl Phys Lett 60(3):347
ISI Web of Knowledge (http://www.isiknowledge.com), accessed on September 2009
Uhlir A (1956) Bell Syst Technol J 35(2):333
Watanabe Y, Sakai T (1971) Rev Electron Commun Labs 19(7–8):899
Otoi F, Anzai K, Kitabayashi H, Uchiho K, Mizokami Y (1984) J Electrochem Soc 131(8):C319
Turner DR (1958) J Electrochem Soc 105(7):402
Archer RJ (1960) J Phys Chem Solids 14:104
Hummel RE, Chang SS (1992) Appl Phys Lett 61(16):1965
Saadoun M, Mliki N, Kaabi H, Daoudi K, Bessais B, Ezzaouia H, Bennaceur R (2002) Thin Solid Films 405(1–2):29
Carstensen J, Christophersen M, Lolkes S, Ossei-Wusu E, Bahr J, Langa S, Popkirov G, Föll H (2005) Phys Stat Solid C 2(9):3339
Rieger MM, Kohl PA (1995) J Electrochem Soc 142(5):1490
Allongue P, Kieling V, Guerischer H (1995) Electrochim Acta 40(10):1353
Rao AV, Ozanam F, Chazalviel JN (1991) J Electrochem Soc 138(1):153
Gerischer H (1990) Electrochim Acta 35(11–12):1677
Beale MIJ, Benjamin JD, Uren J, Chew NG, Cullis AG (1985) J Cryst Growth 73(3):622
Smith RL, Collins SD (1992) J Appl Phys 71(8):R1
Dittrich Th, Yu Timoshenko V, Rappich J (2001) J Appl Phys 90(5):2310
Berger MG, Dieker C, Thönissen M, Vescan L, Lüth H, Münder H (1994) J Phys D 27(6):1333
Frohnhoff St, Berger MG, Thömissen M, Dieker C, Vescan L, Münder H, Lüth H (1995) Thin Solid Films 255(1–2):59
Steckl A, Xu J, Mogul H, Prokes S (1995) J Electrochem Soc 142:L69
Torres-Costa V, Martín-Palma RJ, Manotas S, Agulló-Rueda F, Martínez-Duart JM (2004) Bol Soc Esp Cerám Vidrio 43(2):506
Theiss W (1997) Surf Sci Rep 29:91
Lehmann V (2002) Electrochemistry of silicon. Instrumentation, science, materials and applications. Wiley-VCH, Weinheim
Labunov V, Bondarenko V, Glinenko L, Dorofeev A, Tabulina L (1986) Thin Solid Films 137:123
Barla K, Bomchil G, Herino R, Pfister JC, Baruchel J (1984) J Cryst Growth 68:721
Munder H, Andrzejak C, Berger MG, Klemradt U, Luth H, Hérino R, Ligeon M (1992) Thin Solid Films 221(1–2):27
Bellet D, Dolino G (1996) Thin Solid Films 276:1
Martín-Palma RJ, Pascual L, Herrero P, Martínez-Duart JM (2005) Appl Phys Lett 87:211906
Campbell IH, Fauchet MP (1986) Solid State Commun 58:739
Mariotto G, Ziglio F, Freire FL Jr (1995) J Non-Cryst Solids 192/193:253
Manotas S, Agulló-Rueda F, Moreno JD, Martín-Palma RJ, Guerrero-Lemus R, Martínez-Duart JM (1999) Appl Phys Lett 75(7):977
Sui Z, Leong PP, Herman IP, Higashi GS, Temkin H (1992) Appl Phys Lett 60(17):2086
Munder H et al (1992) Thin Solid Films 22:27
Frohnhoff St, Marso M, Berger MG, Thonissen M, Luth H, Mender H (1995) J Electrochem Soc 142(2):615
Lehmann V, Jobst B, Muschik T, Kux A, Petrova-Koch V (1993) Jpn J Appl Phys 32(5):2095
Cullis AG, Canham LT (1991) Nature 353:335
Martín-Palma RJ, Pascual L, Landa A, Herrero P, Martínez-Duart JM (2004) Appl Phys Lett 85(13):2517
Martín-Palma RJ, Pascual L, Herrero P, Martínez-Duart JM (2002) Appl Phys Lett 81(1):25
Hirsch P, Howie A, Nicholson RB, Pashley DW, Whelan MM (1997) Electron microscopy of thin crystals. Krieger, Melbourne
Torres-Costa V, Martın-Palma RJ, Pászti F, Climent-Font A, Martínez-Duart JM (2006) J Non-Cryst Solids 352(23–25):2521
Williams DB, Carter CB (1996) Transmission electron microscopy. Plenum Press, London
Barla K, Hérino R, Bomchil G, Pfister JC, Freund A (1984) J Cryst Growth 68:727
Buttard D, Bellet D, Dolino G (1996) J Appl Phys 79:8060
Laiho R, Pavlov A, Pavlova Y (1997) Thin Solid Films 297:138
Pavlov A, Pavlova Y (1997) Thin Solid Films 297:132
Torres-Costa V (2006) PhD thesis, Universidad Autónoma de Madrid, Spain
Davies H (1954) Proc Inst Electr Eng 101:209
Bennett HE, Porteus J (1960) J Opt Soc Am 51:123
Hecht E, Zajac A (1986) Óptica. Addison-Wesley Iberoamericana, Wilmington, p 86
Hilbrich S, Theiss W, Arens-Fischer R, Glück O, Berger MG (1996) Thin Solid Films 276:231
Bruggeman DAG (1935) Ann Phys 24:636
Looyenga H (1965) Physica (Amsterdam) 31:401
Bergman DJ (1978) Phys Rev C 43:377
Pavesi L (1997) Riv Nuovo Cimento 20:1
Torres-Costa V, Martín-Palma RJ, Martínez-Duart JM (2004) Appl Phys A 79(8):1919
Basmaji P, Bagnato VS, Grivickas V, Surdutovich GI, Vitlina R (1993) Thin Solid Films 233(1–2):131
Zangooie S, Jansson R, Arwin H (1999) J Appl Phys 86(2):850
Sagnez I, Halimaoui A, Vincent G, Badoz PA (1993) Appl Phys Lett 62:1155
Von Behren J, van Buuren T, Zacharias M, Chimowitz EH, Fauchet PM (1998) Solid State Commun 105:317
Torres-Costa V, Pászti F, Climent-Font A, Martín-Palma RJ, Martínez-Duart JM (2005) J Electrochem Soc 152(11):G846
Macleod HA (1969) Thin-film optical filters, chap 5. Hilger, London
Ben-Chorin M, Möller F, Köch F (1995) J Appl Phys 77(8):4482
Krüger M, Marso M, Berger MG, Thönissen M, Billat S, Loo R, Reetz W, Lüth H, Hilbrich S, Arens-Fischer R, Grosse P (1997) Thin Solid Films 297(1–2):241
Torres-Costa V, Martín-Palma RJ, Martínez-Duart JM (2007) Mater Sci Eng C 27(5–8):954
Mulloni V, Gaburro Z, Pavesi L (2000) Phys Stat Solid A 182:479
Jalkanen T, Torres-Costa V, Salonen J, Björkqvist M, Mäkilä E, Martínez-Duart JM, Lehto V-P (2009) Opt Exp 17(7):5446
Lin VS-Y, Motesharei K, Dancil K-PS, Sailor MJ, Ghadiri MR (1997) Science 278:840
Chan S, Fauchet PM, Li Y, Rothberg LJ, Miller BL (2000) Phys Stat Solid 182:541
Martin-Palma RJ, Guerrero-Lemus R, Moreno JD, Martinez-Duart JM, Herrero P (1998) J Mater Sci Lett 17:845
Torres-Costa V, Agullo-Rueda F, Martín-Palma RJ, Martínez-Duart JM (2005) Opt Mater 27:1084
Acknowledgements
Partial funding was provided by the Spain’s National R&D Programme through grant no. MAT2008-06858-C02-01/NAN. Authors wish to thank T. Jälkanen and J. Salonen from the University of Turku (Finland) for fruitful discussion regarding the optical gas sensors, and Mr. Luis G. Pelayo for his technical contribution to this work.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Torres-Costa, V., Martín-Palma, R.J. Application of nanostructured porous silicon in the field of optics. A review. J Mater Sci 45, 2823–2838 (2010). https://doi.org/10.1007/s10853-010-4251-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10853-010-4251-8