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Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films

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Abstract

Li,Cu-codoped NiO thin films were deposited on fused silica substrates using a chemical solution deposition method. These thin films were phase-pure and (200) orientated with cubic structure. The transmittance and conductivity for the Li x Cu0.1Ni0.9−x O thin films increased as the Li content (x) increased. Transmittance of about 80% in the visible region and an optical bandgap of 3.27 eV were obtained for the Li0.1Cu0.1Ni0.8O thin film. Furthermore, the resistivity was reduced to 0.046 Ω cm for the Li0.1Cu0.1Ni0.8O thin film. The high transmittance and low resistivity resulted from larger grain size, increased as the Li content increased. These results suggest that Li,Cu-codoped NiO thin films can be utilized as p-type transparent conducting oxides.

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People’s Republic of China

    Xinman Chen, Lingzhi Zhao & Qiaoli Niu

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  1. Xinman Chen
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  2. Lingzhi Zhao
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  3. Qiaoli Niu
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Correspondence to Xinman Chen.

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Chen, X., Zhao, L. & Niu, Q. Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films. J. Electron. Mater. 41, 3382–3386 (2012). https://doi.org/10.1007/s11664-012-2213-4

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  • DOI: https://doi.org/10.1007/s11664-012-2213-4

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