Landolt-Börnstein - Group III Condensed Matter

Gallium nitride (GaN), phonon data, elastic moduli, Grüneisen and rel. parameters

Abstract

This document is part of Subvolume A1b ‘Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties‘ of Volume 41 ‘Semiconductors‘ of Landolt-Börnstein - Group III Condensed Matter.

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Title: Gallium nitride (GaN), phonon data, elastic moduli, Grüneisen and rel. parameters
Book Title: Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
Book DOI: 10.1007/b80447
Chapter DOI: 10.1007/10832182_127
Part of: Landolt-Börnstein - Group III Condensed Matter
Volume: 41A1β

Editors

O. Madelung
U. Rössler
M. Schulz

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O. Madelung, U. Rössler, M. Schulz (ed.) SpringerMaterials

Gallium nitride (GaN), phonon data, elastic moduli, Grüneisen and rel. parameters Landolt-Börnstein - Group III Condensed Matter 41A1β (Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties)

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