Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 films

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Abstract

Amorphous As2Se1Te2 (a-As2Se1Te2) films, into which Cu or Cd ions were doped by thermal diffusion below the glass transition temperature exhibited the increase of conductivity by several orders of magnitude. In addition, these samples exhibited enhanced photoconductivity and the activation type conduction. From the measurements of the thermoelectric power, it was found that Cu doped samples were p-type and Cd doped samples were n-type. The impurities was also studied by SIMS.

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