Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 films
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Cited by (81)
Influence of thermal and compositional variations on conduction mechanisms and localized state density of amorphous Cd<inf>50</inf>S<inf>50−x</inf>Se<inf>x</inf> thin films
2018, Journal of Non-Crystalline SolidsCitation Excerpt :This result may be because the increase in the disorder of the atomic bonding, which leads to increase the tail state densities which are adjacent to the edge of the band [15,39]. The third conduction mechanism of electrical conductivity is due to the ionization of impurity atoms and dominant mechanism is the hopping conduction around the Fermi level [11,36–40]. It occurs at low temperature region (LT) in the range of 293 to 370 K.
Electrical transport properties and Mott's parameters of chalcogenide cadmium sulphoselenide bulk glasses
2016, Journal of Non-Crystalline SolidsCitation Excerpt :By reference to Fig. 1 again, and correlating the results of increasing of dc-electrical conductivity with increasing Se content with those of the activation energy values Eo. It can deduce that, the dc-electrical conductivity increased due to the decrease in activation energy value which is found to be associated with the shift of Fermi level in impurity doped chalcogenide glasses [47,48,51]. However, it is also pointed out that the increase in conductivity values could be caused by the increase in hopping conduction through defect states associated with the impurity atoms [48,51].
Influence of Zn doping on structural, optical and electrical properties of nanocrystalline CdSe thin films
2015, Journal of Alloys and CompoundsElectrical conductivity and dielectric relaxation of bulk Se <inf>70</inf>Bi<inf>(30 - X)</inf>Te<inf>x</inf>, x = (0, 15) chalcogenide glasses
2014, Journal of Non-Crystalline SolidsCitation Excerpt :The conducting additive in a dielectric may have a very large effect on its electrical response. The presence of an additive might increase the concentration of charge carriers and there may be a shift of the Fermi level [46,47,26]. Dielectric constant ε1, dielectric loss ε2 and ac conductivity σac(ω) are measured as a function of temperature and frequency for bulk Se70Bi30 and Se70Bi15Te15 alloys (disc samples), in the frequency range of 1–100 kHz and temperature ranges of 303–323 K and 303–343 K, respectively.
Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se<inf>95-x</inf>S<inf>x</inf>Zn<inf>5</inf> thin films
2013, Journal of Physics and Chemistry of SolidsElectrical and optical properties of a-Se<inf>x</inf>Te<inf>100x</inf> thin films
2012, Optics and Laser TechnologyCitation Excerpt :As compared to the initial value of dc conductivity, an overall decreasing trend is seen for the present system. This decrease in conductivity may result in increase in the defect states associated with the impurity atoms [27]. A clear distinction between two conduction mechanisms can be obtained on the Mott and Davis [28] model.