High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser
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Cited by (89)
Inorganic nonlinear optical materials
2023, Comprehensive Inorganic Chemistry III, Third EditionFrequency down-conversion of solid-state laser sources to the mid-infrared spectral range using non-oxide nonlinear crystals
2015, Progress in Quantum ElectronicsCitation Excerpt :To obtain shorter idler pulses from OPGs cascaded schemes could be employed, first transforming λ3, e.g. of ultrafast Ti:Sa amplifiers operating in the 800-nm spectral range. For long time, the only demonstration of such a fs OPG was with a 2-mm type-I ZGP in a single pass arrangement [487,488], Table 12. Whereas ~100 ps pulses profit from longer NLCs and the OPG threshold can be very low in terms of peak intensity, the main problem is that for reasonable crystal lengths (L values up to few cm in Table 12) the parametric gain bandwidth is still too large to obtain Fourier-limited pulses.
Effect of Ga addition on optical properties of crystalline Ga<inf>20</inf>Se<inf>80</inf> system
2014, OptikCitation Excerpt :Due to outstanding nonlinear optical and electronic properties, it has been widely investigated during the last few years. Results on harmonic generation [40,41], parametric oscillations, [42], or frequency mixing [43,44] in the near and middle IR, as well as effects related to excitonic optical nonlinearties giving rise to optical bi stability, are available in the literature [45,46]. It has also potential applications for frequency doubling and fast optical gating [47], behaves as an X-ray detector [48] and photovoltaic applications [49].
Nonlinear and saturable absorption characteristics of Ho doped InSe crystals
2014, Optics CommunicationsCitation Excerpt :The group III–VI materials (III—Ga, In; VI—S, Se, Te) are commonly referred to as layered (GaSe-type) chalcogenides. GaSe [1–4] and InSe [1,5,6] have been widely investigated during the last few years due to their outstanding nonlinear optical properties and promising materials for photoelectronic applications [7–11]. Although nonlinear absorption characteristics of pure and doped GaSe single crystals have been widely investigated [8,12–18], the studies about the nonlinear absorption of InSe single crystal is limited [1].
Fabrication of single-phase ε-GaSe films on Si(100) substrate by metal organic chemical vapor deposition
2013, Thin Solid FilmsCitation Excerpt :GaSe has been studied extensively owing to the potential applications for optoelectronic [4–6] and photovoltaic devices [7]. It has been used as the intermediate layer for lattice-mismatched semiconductor material system such as GaAs-on-Si with reduced number of misfit dislocations [8] and nonlinear optical conversion devices in the near- to far-infrared wavelength range [9–12]. In addition, GaSe crystals have been used for frequency doubling and fast optical gating [13] and behave as an X-ray beam detector by producing direct current from high fluxes of 130 and 170 kV X-ray at different exposure rates [14].
- 1
Present address: EP III, Uni-Bayreuth, Postfach 101251, W-8580 Bayreuth, Germany (also for communications).
- 2
Siberian Branch Acad. Sci. USSR, Tomsk, USSR.
- 3
The Institute of Physics, Acad. Sci. Azerbaijan SSR, Narimanov str. 33, 370141 Baku, USSR.