Chemical sensitivity of an ISFET with Ta2O5 membrane in strong acid and alkaline solutions
References (15)
- et al.
Microstructured solid-state ion-sensitive membranes by thermal oxidation of Ta
Sensors and Actuators B
(1990) - et al.
Investigation of pH-sensitive ISFETs with oxide and nitride membranes using colloid chemistry methods
Sensors and Actuators B
(1990) - et al.
Ionensensitiver Feldeffekttransistor mit Ta2O5-Schicht für den Einsatz bei pH-Messungen
VDI-Ber.
(1984) - Yu. G. Vlasov, A.V. Bratov and Yu. A. Tarantov, Physical and chemical processes in ion-sensitive field-effect...
- J.A. Voorthuyzen, H. van Vossen and P. Bergveld, Preparation and evaluation of tantalum pentoxide films for ISFET...
Cited by (40)
Inkjet printed Ta<inf>2</inf>O<inf>5</inf> on a flexible substrate for capacitive pH sensing at high ionic strength
2022, Sensors and Actuators B: ChemicalHigh performance Fin-FET electrochemical sensor with high-k dielectric materials
2020, Sensors and Actuators, B: ChemicalCitation Excerpt :Materials with better chemical performance, meaning higher intrinsic buffer capacity, while also being more resistant to dissolution in both acidic and basic conditions, have the potential to provide reliability and stability to the device. To measure the impact of the dielectric in FETs, the detection of the acidity of a solution in aqueous electrolytes (pH) has been used as a direct comparison of the performance among different oxides [30,31]. The response of the dielectric towards pH can be described using the combined Gouy-Chapman-Stern and Site-Binding (GCS-SB) models, where the GCS model describes the electrical double layer that forms at the oxide interface, and the SB model describes the grade of ionization (protonation or deprotonation) of the surface chemical groups of the dielectric barrier [32].
Specific and label-free immunosensing of protein-protein interactions with silicon-based immunoFETs
2019, Biosensors and BioelectronicsAtomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties
2017, Thin Solid FilmsCitation Excerpt :Tantalum oxide (Ta2O5) is a dielectric material having a high chemical, thermal and mechanical stability, a high refractive index (~ 2.2) and a wide optical band gap (~ 4.3 eV), a high dielectric constant (22–28 for amorphous Ta2O5), low leakage currents as well as a good dielectric breakdown strength [1–3]. Due to these interesting properties, Ta2O5 thin films have been utilized for various applications, for example as corrosion resistant coatings [4,5], protective coating for sensors [6], copper diffusion barrier [7,8], antireflective coating [9], optical waveguides [10,11], ion-sensitive membranes in solid-state ion sensors [12,13], alternative gate dielectric in metal-oxide-semiconductor field-effect transistors [1,14,15] as well as in organic thin-film transistors [16], and as high-k dielectric in dynamic random access memory (DRAM) capacitors [1–3,17,18]. The deposition of Ta2O5 thin films has been realized by numerous methods such as sputtering [2,4,6,9,11,17], electro-spray deposition [7], the thermal oxidation of thin tantalum layers [2,12,13], electron-beam evaporation [9,16], chemical vapor deposition (CVD) [15,18–20], photo-CVD [21], and atomic layer deposition (ALD) [7,8,22–44].
Miniaturized metal oxide pH sensors for bacteria detection
2016, TalantaCitation Excerpt :However, platinum and transition metal oxides, such as iridium, ruthenium, vanadium and osmium oxides, show ionic and electronic conductivity and may be used as direct potentiometric pH sensors [14]. For instance, Ta2O5 layers show excellent pH sensitivity in a very wide pH range [22] but their utilization up to date has been mostly limited to ISFET-based sensors [23]. Miniature ISFET-based pH sensors can be applied to bacteria activity monitoring [14–17].