High-temperature ceramic pressure sensor

https://doi.org/10.1016/S0924-4247(96)01438-0Get rights and content

Abstract

A pressure microsensor for working at high temperature has been developed. The device consists of a tantalum nitride thin film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized silicon wafers with an aluminium interconnection layer and a silicon dioxide passivation. The microsensors present a low temperature coefficient of resistance and good long-term stability. The sensitivity is 0.15 mV (V bar)−1 with low sensitivity drift and low combined non-linearity and hysteresis in the pressure range 0–10 bar.

References (2)

Cited by (15)

  • Reliability and characteristics of magnetron sputter deposited tantalum nitride for thin film resistors

    2018, Thin Solid Films
    Citation Excerpt :

    Among various types of passive components, tantalum nitride (TaN) films are considered the most promising candidates for embedded passive resistors [1–3] in integrated circuits due to their outstanding properties such as excellent corrosion resistances, hard materials, chemically inert features, high strengths and toughness even at elevated temperatures, histocompatibility, high conductivities, and thermal stabilities [4–8]. For these reasons, TaN films are implemented as robust materials of choice for a wide range of applications such as diffusion barriers [9,10], wear and corrosion-resistance materials [11], high-speed thermal printing heads [12], stable resistors used in Si-based integrated circuits [13–15], pressure sensors [16,17], and microelectronic industries. TaN films have been deposited using physical and chemical vapor deposition techniques [4,5,14,18–20].

  • Recent progresses on flexible tactile sensors

    2017, Materials Today Physics
    Citation Excerpt :

    The substrate, although does not contribute directly to the sensing function, may determine the flexibility of tactile sensors. For traditional tactile sensors, silicon, ceramics, and glass have been utilized as substrate [76–78]. However, these materials are brittle, limiting the practical applications of tactile sensors.

  • Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading

    2017, Thin Solid Films
    Citation Excerpt :

    Tantalum and tantalum nitride thin films have outstanding properties, like excellent corrosion resistance, a high melting point and a resistivity as well as a temperature coefficient of resistance (TCR) which are both tunable within certain limits [1]. Therefore, they are implemented as robust materials of choice for a wide range of miniaturized devices such as pressure sensors [2,3] or in electronic devices as e.g. diffusion barriers [4] and protective layers [5]. There exists a wide range of deposition techniques for tantalum nitride thin films like chemical vapor deposition (CVD) [1], atomic layer deposition (ALD) [6], electron beam evaporation (EBE) [7] or sputtering [8–10].

  • The impact of substrate properties and thermal annealing on tantalum nitride thin films

    2012, Applied Surface Science
    Citation Excerpt :

    Other interesting properties are their tunable film properties such as the hardness in dependence of structure and nitrogen content, showing values of 61.8 GPa for Ta4N, 15.5 GPa for hexagonal TaN0.8 and 49.9 GPa for cubic TaN [4] as well as the resistivity and the temperature coefficient of resistance (TCR) (i.e. 20 μΩ cm and 3200 ppm/K for α-Ta and up to −6 × 106 μΩ cm and −40,000 ppm/K for Ta3N5) [5]. Furthermore, tantalum nitride or oxynitride thin films are used as strain gauges in pressure sensors for operation temperatures ranging up to 300 °C [6–11] promising an enhanced performance compared to purely metallic strain gauges due to a gauge factor in the range 3.5–6.2 [10] and the possibility to realize a low TCR. When the strain-sensitive components are made of pure platinum a gauge factor of about 3.85 is determined at room temperature decreasing to about 2.4 at operation temperatures above 640 °C [12].

  • Micro-pressure sensors made of indium tin oxide thin films

    2007, Sensors and Actuators, A: Physical
View all citing articles on Scopus
View full text