High-temperature ceramic pressure sensor
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Cited by (15)
Reliability and characteristics of magnetron sputter deposited tantalum nitride for thin film resistors
2018, Thin Solid FilmsCitation Excerpt :Among various types of passive components, tantalum nitride (TaN) films are considered the most promising candidates for embedded passive resistors [1–3] in integrated circuits due to their outstanding properties such as excellent corrosion resistances, hard materials, chemically inert features, high strengths and toughness even at elevated temperatures, histocompatibility, high conductivities, and thermal stabilities [4–8]. For these reasons, TaN films are implemented as robust materials of choice for a wide range of applications such as diffusion barriers [9,10], wear and corrosion-resistance materials [11], high-speed thermal printing heads [12], stable resistors used in Si-based integrated circuits [13–15], pressure sensors [16,17], and microelectronic industries. TaN films have been deposited using physical and chemical vapor deposition techniques [4,5,14,18–20].
Recent progresses on flexible tactile sensors
2017, Materials Today PhysicsCitation Excerpt :The substrate, although does not contribute directly to the sensing function, may determine the flexibility of tactile sensors. For traditional tactile sensors, silicon, ceramics, and glass have been utilized as substrate [76–78]. However, these materials are brittle, limiting the practical applications of tactile sensors.
Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading
2017, Thin Solid FilmsCitation Excerpt :Tantalum and tantalum nitride thin films have outstanding properties, like excellent corrosion resistance, a high melting point and a resistivity as well as a temperature coefficient of resistance (TCR) which are both tunable within certain limits [1]. Therefore, they are implemented as robust materials of choice for a wide range of miniaturized devices such as pressure sensors [2,3] or in electronic devices as e.g. diffusion barriers [4] and protective layers [5]. There exists a wide range of deposition techniques for tantalum nitride thin films like chemical vapor deposition (CVD) [1], atomic layer deposition (ALD) [6], electron beam evaporation (EBE) [7] or sputtering [8–10].
The impact of substrate properties and thermal annealing on tantalum nitride thin films
2012, Applied Surface ScienceCitation Excerpt :Other interesting properties are their tunable film properties such as the hardness in dependence of structure and nitrogen content, showing values of 61.8 GPa for Ta4N, 15.5 GPa for hexagonal TaN0.8 and 49.9 GPa for cubic TaN [4] as well as the resistivity and the temperature coefficient of resistance (TCR) (i.e. 20 μΩ cm and 3200 ppm/K for α-Ta and up to −6 × 106 μΩ cm and −40,000 ppm/K for Ta3N5) [5]. Furthermore, tantalum nitride or oxynitride thin films are used as strain gauges in pressure sensors for operation temperatures ranging up to 300 °C [6–11] promising an enhanced performance compared to purely metallic strain gauges due to a gauge factor in the range 3.5–6.2 [10] and the possibility to realize a low TCR. When the strain-sensitive components are made of pure platinum a gauge factor of about 3.85 is determined at room temperature decreasing to about 2.4 at operation temperatures above 640 °C [12].
Co-deposition of silver nanoclusters and sputtered alumina for sensor devices
2007, Thin Solid FilmsMicro-pressure sensors made of indium tin oxide thin films
2007, Sensors and Actuators, A: Physical