In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD
Highlights
► Intrinsic and n-type silicon nanowires were synthesized on flexible substrates. ► Crystal structure of the nanowires was single crystal. ► Intrinsic silicon nanowires tended to have high concentration twins. ► Phosphorus atom percentage of n-type silicon nanowires was 2.17%.
Introduction
One-dimensional nanostructured materials and ordered nanomaterial arrays have attracted great interest in the recent years due to their novel chemical and physical properties [1], [2], [3] for future use in improving the performance of electronic devices [4], [5], [6], [7] while silicon nanowire (SiNW) arrays have shown a great potential to fabricate high efficiency and cost-effective solar cells because of their excellent optical and electrical properties [8], [9], [10], [11], [12].
Vapor–liquid–solid (VLS) [13] growth is the most common method used for the synthesis of SiNWs. Among all the methods of synthesizing SiNWs by VLS, the route where SiNWs are synthesized in situ after hydrogen plasma treatment on TCO/glass substrates by plasma-enhanced chemical vapor deposition (PECVD) has very great attractiveness for its several advantages: low temperature, large area and no Au contamination. Alet et al. [14] and Jeon and Kamisako. [15] have reported some valuable results about this route. But they focused only on glass substrates and little work has been done on synthesizing SiNWs on flexible substrates. The flexible stainless steel substrate can be a natural electrode. Thus, forming SiNWs on flexible stainless steel is attractive for photovoltage and stored energy devices such as solar cells and lithium battery. In this paper, in situ formation of indium catalysts and subsequent synthesis of crystalline SiNWs on flexible stainless steel substrates by PECVD are reported. The characteristics of the synthesized SiNWs were analyzed and discussed.
Section snippets
Experimental details
The indium nanoparticles as metal catalysts were fabricated by hydrogen plasma treatment on the Indium Tin Oxide (ITO)-coated substrates [16] and the SiNW growths were performed by PECVD using SiH4 as the precursor gas and H2 as the carrier gas. The flexible stainless steel substrates were cleaned sequentially in the baths of acetone, ethanol and deionized water with ultrasonic agitation for 10 min. Then, they were coated with about 10 nm thickness ITO by radio frequency magnetron sputtering.
Results and discussion
The indium catalyst droplets and the as-grown n-type SiNWs were characterized by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The SiNWs were synthesized for 30 min on the flexible stainless steel substrates. Fig. 1(a) and (b) shows the top views FE-SEM image and back-scattered electron image of the SiNW arrays, respectively. The figures clearly show that the SiNWs present a tapered shape, some of them being bent or kinked. The tapering is due to the formation
Conclusion
We prepared intrinsic and n-type SiNWs by vapor–liquid–solid on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. The intrinsic SiNWs had better morphology but tended to form higher concentration twins compared the n-type SiNWs. Indium nanoparticles as metal catalysts were fabricated on the flexible stainless steel substrates by hydrogen plasma treatment. Excellent crystallinity of the as-synthesized silicon nanowires was demonstrated by TEM and XRD. EDS
Acknowledgments
This work was financially supported by National High Technology Research and Development Program (863 Program) of China (No. 2011AA050504) and the Knowledge Innovation Program of the Chinese Academy of Sciences (No. 1KGCX2-YW-383-1).
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