LetterExperimental analysis of upconversion with both coherent monochromatic irradiation and broad spectrum illumination
Graphical Abstract
Research highlights
► We investigated upconversion both under monochromatic and broad-band illumination. ► We showed a significant short-circuit current due to upconversion under broad-band illumination. ► An EQE of 1.07±0.13% in the spectral range from 1460 to 1600 nm was achieved. ► The EQE tends to be higher under broad-band illumination than under monochromatic radiation.
Introduction
Silicon solar cells lose about 20% of the energy incident from the sun because photons with energies below the band-gap are not absorbed. Upconversion (UC) of such low-energy photons, meaning the generation of one high-energy photon out of at least two low-energy photons [1], pushes the theoretical efficiency limit of a silicon solar cell illuminated by non-concentrated light from close to 30% [2] up to 40.2% [3].
For the application on silicon solar cells, the highest UC efficiencies so far have been achieved with hexagonal β-NaYF4 doped with trivalent erbium [4], [5]. Er3+ features conveniently spaced energy levels for UC. The β-NaYF4 host lattice has low phonon energies of less than 450 cm−1 and, accordingly, non-radiative losses are strongly reduced compared to, e.g. oxide lattices [6]. The application of upconverters to harvest solar energy implies certain requirements: UC has to take place under non-coherent illumination and ideally should work over a wide spectral range. In contrast, the reported UC investigations mostly relied on coherent laser excitation [4], [5], [7], [8], [9]. The only UC experiments with broad spectrum illumination were restricted to the visible range of the spectrum [10], and are therefore of minor significance for application on silicon solar cells. In contrast, in this paper we investigate the behavior of Er-based upconverters both with coherent laser excitation and additionally with broad spectrum illumination and compare the two approaches.
Section snippets
Setup and method
A bifacial, back junction silicon solar cell with an active area of 4.5×4.5 mm2 served as the basis for an upconverter photovoltaic device. Details on the solar cell manufacturing process have been presented in Ref. [11]. Under one-sun AM1.5G illumination on the grid-free planar side, the solar cell exhibits around 19% efficiency, by illumination on the grid-covered side the efficiency is only 16.7% because of the high reflection losses caused by the grid. The upconverter was attached to the
Setup and method
The application of UC on solar cells implies continuous illumination with a broad spectrum. Therefore, we investigated the upconverter/solar cell device under concentrated broad spectrum illumination. Fig. 2 shows a schematic of the experimental setup. To increase the relative impact of the upconverter layer, a polished silicon wafer with a thickness of 160 μm blocks most of the light that can be used directly by the Si solar cell, but transmits the IR photons suitable for UC. The remaining
Conclusions
We showed that a silicon solar cell with attached β-NaYF4:20% Er3+ upconverter material responds with an EQEUC(λinc,I) of 0.64% at an incident wavelength of 1523 nm and an irradiance of 2305 Wm−2. The efficiency increases with irradiance and shows a power law dependence with a characteristic exponent m=1.886±0.004. For the first time in the context of silicon solar cells, we demonstrated UC behavior under broad spectrum illumination. The upconverted photons induced an extra current of 0.69±0.08 mA
Acknowledgements
The research leading to these results has received funding from the German Federal Ministry of Education and Research in the project “Nanovolt—Optische Nanostrukturen für die Photovoltaik” (BMBF, project number 03SF0322H), and from the European Community's Seventh Framework Program (FP7/2007-2013) under grant agreement no. [246200]. S. Fischer gratefully acknowledges the scholarship support from the Deutsche Bundesstiftung Umwelt DBU and P. Löper the support from the Reiner Lemoine Stiftung.
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