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Ultrahigh electron mobility in suspended graphene

https://doi.org/10.1016/j.ssc.2008.02.024Get rights and content

Abstract

We have achieved mobilities in excess of 200,000 cm2 V −1 s−1 at electron densities of ∼2 ×1011 cm−2 by suspending single layer graphene. Suspension ∼150 nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, nonsuspended devices. This advance should allow for accessing the intrinsic transport properties of graphene.

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Acknowledgements

We acknowledge fruitful discussions with and experimental help from Erik Henriksen, Jeffrey Kysar, Andrea Young, Barbaros Özyilmaz, and Pablo Jarillo-Herrero. This work is supported by the NSF (No. DMR-03-52738), NSEC grant CHE-0641523, NYSTAR, DOE (No. DE-AIO2-04ER46133 and No. DEFG02-05ER46215), ONR (No. N000150610138), FENA MARCO, W. M. Keck Foundation, and the Microsoft Project Q.

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