Growth, structure, and thermal stability of epitaxial BaTiO3 films on Pt(111)
Introduction
Besides its outstanding properties with respect to piezoelectricity, pyroelectricity, and high dielectric constant, BaTiO3 shows ferroelectricity at room temperature. This makes BaTiO3 to the prototypical ferroelectric perovskite. Between 275 K and the paraelectric-to-ferroelectric transition temperature (TC) of 403 K, BaTiO3 has a tetragonal symmetry where the Ba and the Ti sublattices are slightly shifted relative to the negatively charged O ions. This shift produces a remanent electrical polarization. A number of experimental and theoretical studies have shown that ferroelectricity persists down to nanometer scales. As part of the oxide superlattices even single unit cell high BaTiO3 layers were found to be ferroelectric under appropriate boundary conditions [1], [2], [3], [4]. These properties turn BaTiO3 to an interesting material for applications in non-volatile ferroelectric memories (FERAMs), ferroelectric tunnel junctions (FTJs), optical wave guide devices, layered multiferroics, and oxide superlattices [5], [6]. As a consequence research on BaTiO3 focusses on the dielectric properties of thin films and the influence of structural changes and preparation conditions [7], [8], [9], [10].
Surface science investigations of BaTiO3 surfaces under ultra-high vacuum (UHV) conditions are still rather scarce. The single crystal surfaces have been studied by LEED, XPS, and STM for the BaTiO3(100) surface [11], [12], [13], [14], [15], and the BaTiO3(111) surface [16], [17]. However, surface science characterization of epitaxial BaTiO3 thin films is still at the beginning. There have been studies on (100)-oriented BaTiO3 films on various substrates using He+ ion scattering [18], photoelectron spectroscopy [19], and LEED I-V [20]. However, no studies of (111)-oriented thin films prepared and studied under UHV conditions have been reported so far.
For the (111) surface of BaTiO3 one would expect – in the absence of any surface reconstruction – a hexagonal structure as schematically indicated in Fig. 1 for the case of a Ti termination. The Ba and O ions are located within the same plane with a 1:3 ratio, whereas the terminating Ti ions are positioned in the three-fold hollow sites above three O ions. As indicated in Fig. 1, this unit cell has a formal BaTiO3 stoichiometry. In the following, the term monolayer equivalent (MLE) for this smallest structural unit with BaTiO3 stoichiometry is used. Since the lattice mismatch between the BaTiO3(111) and the Pt(111)-(2 × 2) unit cells is only 2% one might expect epitaxial growth as indicated in Fig. 1. Based on the BaTiO3 bulk structure the next layer is expected to be 2.3 Å above this interface layer.
In this work, we present a scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and X-ray photoelectron spectroscopy (XPS) investigation of rf magnetron sputter deposited epitaxial BaTiO3 films prepared on a Pt(111) substrate and report on the morphology, the atomic structure, and the stoichiometry as well as the annealing behaviour of ultrathin BaTiO3 films starting from the submonolayer regime. In the following the experimental data for BaTiO3 coverages of 0.4, 0.8, 1, and 4 MLE will be presented. In the second part of the paper the changes in structure and stoichiometry are discussed which occur upon annealing in UHV and O2 atmosphere, respectively. The deposited BaTiO3 films develop a long-range order upon annealing at 1050 K in UHV. At 1150 K the BaTiO3 thin films form large two-dimensional islands on the Pt substrate which reveal different surface structures depending on the O2 partial pressure during annealing. This includes a BaTiO which is well known for the BaTiO3(111) single crystal surface under mildly reducing conditions [16], [17].
Section snippets
Experimental
The experiments have been performed in an ultra-high vacuum (UHV) system operating at a base pressure of 1 × 10− 10 mbar with separate preparation and analysis chambers. The preparation chamber is equipped with Ar+ sputtering and heating facilities for sample cleaning, defined gas inlet, and a planar rf magnetron system (Thin Film Consulting, Grafenberg) for sputter deposition of BaTiO3. The analysis chamber provides STM, LEED, and XPS facilities. The Pt(111) surface was cleaned by several cycles
Long-range ordered BaTiO3 films of different thicknesses
Fig. 2 shows the initial stages of BaTiO3 growth upon deposition of approximately 0.4 MLE. The STM image in Fig. 2(a) reveals a disordered surface with height variations in the range of 5 Å. In this overview image, no individual substrate steps can be identified. In LEED (not shown here), only a diffuse background is visible indicating the absence of a long-range order. Stepwise annealing at 500 K, 750 K, and 850 K in UHV did not significantly change the surface structure. However, annealing the
Conclusion
We report on the growth of long-range ordered epitaxial BaTiO3 films on Pt(111) using rf magnetron sputtering at room temperature. For coverages up to 1 MLE a wetting layer formation and a hexagonal BaTiO3(111) structure is observed upon annealing at 1050 K which is rotated by 30° with respect to the Pt(111) substrate. This structure has a lattice constant of 5.1 Å which corresponds to 10% compression with respect to the bulk lattice constant. Thicker films of 4 MLE show an unrotated BaTiO3
Acknowledgements
Financial support by the DFG Sonderforschungsbereich 762 Functionality of Oxidic Interfaces is gratefully acknowledged and the authors would like to thank R. Kulla for technical support.
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