Abstract
One consequence of the continued downward scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations in the number of these dopants are already a major issue in the microelectronics industry1. Although single dopant signatures have been observed at low temperatures2,3,4,5,6,7,8, the impact on transistor performance of a single dopant atom at room temperature is not well understood. Here, we show that a single arsenic dopant atom dramatically affects the off-state room-temperature behaviour of a short-channel field-effect transistor fabricated with standard microelectronics processes. The ionization energy of the dopant is measured to be much larger than it is in bulk, due to its proximity to the buried oxide9,10, and this explains the large current below threshold and large variability in ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals.
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References
Kuhn, K. et al. Managing process variation in Intels 45 nm CMOS technology. Intel Technol. J. 12, 93–109 (2008).
Schofield, S. R. et al. Atomically precise placement of single dopants in Si. Phys. Rev. Lett. 91, 136104 (2003).
Rueß, F. J. et al. Realization of atomically controlled dopant devices in silicon. Small 3, 563–567 (2007).
Zhong, Z. et al. Coherent single charge transport in molecular-scale silicon nanowires. Nano Lett. 5, 1143–1146 (2005).
Ono, Y. et al. Conductance modulation by individual acceptors in Si nanoscale field-effect transistors. Appl. Phys. Lett. 90, 102106 (2007).
Khalafalla, M. A. H. et al. Identification of single and coupled acceptors in silicon nano-field-effect transistors. Appl. Phys. Lett. 91, 263513 (2007).
Khalafalla, M. A. H. et al. Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors. Appl. Phys. Lett. 94, 223501 (2009).
Lansbergen, G. et al. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET. Nature Phys. 4, 656–661 (2008).
Diarra, M. et al. Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement. Phys. Rev. B 75, 045301 (2007).
Bjork, M. T. et al. Donor deactivation in silicon nanostructures. Nature Nanotech. 4, 103–107 (2009).
Bending, S. J. & Beasley, M. R. Transport processes via localized states in thin α-Si tunnel barriers. Phys. Rev. Lett. 55, 324–327 (1985).
Fowler, A. B. et al. Observation of resonant tunneling in silicon inversion layers. Phys. Rev. Lett. 57, 138–141 (1986).
Geim, A. K. et al. Resonant tunneling through donor molecules. Phys. Rev. B 50, 8074–8077 (1994).
Savchenko, A. K. et al. Resonant tunneling through two impurities in disordered barriers. Phys. Rev. B 52, 17021–17024 (1995).
Calvet, L. et al. Excited-state spectroscopy of single Pt atoms in Si. Phys. Rev. B 78, 195309 (2008).
Kuznetsov, K. et al. Resonant tunneling spectroscopy of interacting localized states: observation of the correlated current through two impurities. Phys. Rev. B 56, 15533–15536 (1997).
Newman, P. F. & Holcomb, D. F. Metal–insulator transition in Si:As. Phys. Rev. B 28, 638–640 (1983).
Kohn, W. & Luttinger, J. M. Theory of donor states in silicon. Phys. Rev. 98, 915–922 (1955).
Schmidt, T. et al. Observation of the local structure of Landau bands in a disordered conductor. Phys. Rev. Lett. 78, 1540–1543 (1997).
Koenemann, J. et al. Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Phys. Rev. B 64, 155314 (2001).
Niquet, Y. M. et al. Electronic structure of semiconductor nanowires. Phys. Rev. B 73, 165319 (2006).
Sanquer, M. et al. Coulomb blockade in low-mobility nanometer size MOSFETs. Phys. Rev. B 61, 7249–7252 (2000).
De Franceschi, S. et al. Electron cotunneling in a semiconductor quantum dot. Phys. Rev. Lett. 86, 878–881 (2001).
Sellier, H. et al. Transport spectroscopy of a single dopant in a gated silicon nanowire. Phys. Rev. Lett. 97, 206805 (2006).
Acknowledgements
The authors thank I. Martin Bragado and D. Conrad from SYNOPSYS for helpful discussions about KMC simulations using SPROCESS. The authors are grateful to C. Delerue for valuable discussions.
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R.W. and M.V. fabricated the devices and O.C. performed the doping simulations. M.P., X.J. and M.S. designed and performed the low-temperature experiment. All the authors analysed the data and co-wrote the paper.
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Pierre, M., Wacquez, R., Jehl, X. et al. Single-donor ionization energies in a nanoscale CMOS channel. Nature Nanotech 5, 133–137 (2010). https://doi.org/10.1038/nnano.2009.373
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DOI: https://doi.org/10.1038/nnano.2009.373
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