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Vacuum Rabi splitting in semiconductors

Nature Physics volume 2, pages 81–90 (2006)Cite this article

Abstract

The recent development of techniques to produce optical semiconductor cavities of very high quality has prepared the stage for observing cavity quantum-electrodynamic effects in solid-state materials. Among the most promising systems for these studies are semiconductor quantum dots inside photonic crystal, micropillar or microdisk resonators. We review the progress so far in obtaining true quantum-optical strong-coupling effects in semiconductors. We discuss the recent results on vacuum Rabi splitting with a single quantum dot, emphasizing the differences from quantum-well systems. Finally, we propose nonlinear tests for the true quantum limit and speculate about applications in quantum information devices.

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Figure 1: Vacuum Rabi splitting using an atom or dot in a small-volume cavity.
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Acknowledgements

For financial support in Tucson: DARPA, NSF (AMOP and EPDT), AFOSR, and AFOSR DURINT; in Marburg: partially by the Deutsche Forschungsgemeinschaft through the Quantum Optics in Semiconductors Research Group and the Optodynamics Center of the Philipps-Universität Marburg; at Caltech: MURI Center for Photonic Quantum Information Systems (ARO/ARDA), NSF-ECS-NIRT and AFOSR.

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Authors and Affiliations

  1. Optical Sciences Center, The University of Arizona, Tucson, Arizona, 85721-0094, USA

    G. Khitrova & H. M. Gibbs

  2. Department of Physics and Material Sciences Center, Philipps-University, Renthof 5, D-35032, Marburg, Germany

    M. Kira & S. W. Koch

  3. Electrical Engineering, California Institute of Technology, Pasadena, California, 91125, USA

    A. Scherer

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Khitrova, G., Gibbs, H., Kira, M. et al. Vacuum Rabi splitting in semiconductors. Nature Phys 2, 81–90 (2006). https://doi.org/10.1038/nphys227

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