Comparison of the hot electron-diffusion rates for GaAs and InP
Comparison of the hot electron-diffusion rates for GaAs and InP
- Author(s): P.E. Bauhahn ; G.I. Haddad ; N.A. Masnari
- DOI: 10.1049/el:19730335
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- Author(s): P.E. Bauhahn 1 ; G.I. Haddad 1 ; N.A. Masnari 1
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View affiliations
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Affiliations:
1: Electron Physics Laboratory, Department of Electrical & Computer Engineering, University of Michigan, Ann Arbor, USA
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Affiliations:
1: Electron Physics Laboratory, Department of Electrical & Computer Engineering, University of Michigan, Ann Arbor, USA
- Source:
Volume 9, Issue 19,
20 September 1973,
p.
460 – 461
DOI: 10.1049/el:19730335 , Print ISSN 0013-5194, Online ISSN 1350-911X
The diffusion coefficients, parallel and transverse to the electric field, have been computed at 300 and 500 K for GaAs, and at 500 K for InP, by a Monte-Carlo method, and the results are presented.
Inspec keywords: gallium arsenide; indium compounds; hot carriers; III-V semiconductors; high field effects
Other keywords:
Subjects: Electrical conductivity of II-VI and III-V semiconductors; High-field transport and nonlinear effects (semiconductors/insulators); II-VI and III-V semiconductors
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