Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures

Hole band structures of p-doped semiconductor heterostructures are presented. The full six-band Luttinger-Kohn Hamiltonian generalized to treat different materials is solved in conjunction with the Poisson equation in a plane-wave representation. Self-consistent solutions of the multiband effective-mass-Poisson equations are obtained for unstrained and biaxially strained zinc-blende GaN/In_xGa_1-xN and GaAs/In_xGa_1-xAs quantum wells and superlattices (SLs), in which the acceptor doping concentration and its profile, the SL period, and the alloy content x are varied. The particular features observed in the valence subband structure of GaN/InGaN systems are stressed in a comparison with other selected In-derived III-V heterostructures, such as GaAs/InGaAs SLs.