Insulin receptor substrate 2 is a negative regulator of memory formation

  1. Karl Peter Giese1,4,6
  1. 1Wolfson Institute for Biomedical Research, University College London, London WC1E 6BT, United Kingdom
  2. 2Centre for Diabetes and Endocrinology, Rayne Institute, University College London, London WC1E 6JJ, United Kingdom
  3. 3MRC Clinical Sciences Centre, Imperial College London, Hammersmith Campus, London, W12 0NN, United Kingdom
  4. 4Centre for the Cellular Basis of Behaviour, Institute of Psychiatry, King's College London, London SE5 9NU, United Kingdom
  5. 5Centre for Molecular Biology and Neuroscience, University of Oslo, 0027 Oslo, Norway

    Abstract

    Insulin has been shown to impact on learning and memory in both humans and animals, but the downstream signaling mechanisms involved are poorly characterized. Insulin receptor substrate-2 (Irs2) is an adaptor protein that couples activation of insulin- and insulin-like growth factor-1 receptors to downstream signaling pathways. Here, we have deleted Irs2, either in the whole brain or selectively in the forebrain, using the nestin Cre- or D6 Cre-deleter mouse lines, respectively. We show that brain- and forebrain-specific Irs2 knockout mice have enhanced hippocampal spatial reference memory. Furthermore, NesCreIrs2KO mice have enhanced spatial working memory and contextual- and cued-fear memory. Deletion of Irs2 in the brain also increases PSD-95 expression and the density of dendritic spines in hippocampal area CA1, possibly reflecting an increase in the number of excitatory synapses per neuron in the hippocampus that can become activated during memory formation. This increase in activated excitatory synapses might underlie the improved hippocampal memory formation observed in NesCreIrs2KO mice. Overall, these results suggest that Irs2 acts as a negative regulator on memory formation by restricting dendritic spine generation.

    Footnotes

    • 6 Corresponding author.

      E-mail Karl.Giese{at}kcl.ac.uk; fax 44 020 77107994.

    • Received December 14, 2010.
    • Accepted April 13, 2011.
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