Electronic structure of silicon

James R. Chelikowsky and Marvin L. Cohen
Phys. Rev. B 10, 5095 – Published 15 December 1974
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Abstract

It is shown that a purely local-pseudopotential calculation is able to accurately reproduce the major optical gaps and cyclotron masses. However, deviations from the experimental results become manifest in photoemission and x-ray charge-density results as we extend our calculations to the lower valence bands. These deviations indicate the necessity of an energy-dependent nonlocal s-well potential, a conclusion which is also supported by an analysis of the Heine-Abarenkov pseudopotential scheme. A detailed comparison is made between experimental results obtained from optical, photoemission, x-ray, and cyclotron-resonance measurements, and the results of both the local calculation and an energy-dependent nonlocal calculation. Yang and Coppens's recent determination of the valence charge density in silicon makes it possible to assess the accuracy of the pseudocharge densities for the first time.

  • Received 1 July 1974

DOI:https://doi.org/10.1103/PhysRevB.10.5095

©1974 American Physical Society

Authors & Affiliations

James R. Chelikowsky and Marvin L. Cohen

  • Department of Physics, University of California, Berkeley, California 94720
  • Inorganic Materials Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

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Issue

Vol. 10, Iss. 12 — 15 December 1974

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