The Raman scattering from various model structures for amorphous silicon is computed. It is shown that the width of the ‘‘optic peak’’ increases roughly linearly with the rms bond-angle distortion Δ${\theta }_b$ of the network. The experimentally observed linewidths lead to 7.7°≤Δ${\theta }_b$≤10.5°. The smaller linewidths (and hence angles) correspond to networks that have been annealed at higher temperatures. These results are consistent with model-building experience which shows that it is impossible to construct fully bonded amorphous networks with Δ${\theta }_b$≤6.6°.

• Received 14 January 1985

DOI:https://doi.org/10.1103/PhysRevB.32.874