We derive an expression for the effective g factor in the presence of magnetic impurities. The expression is suitably modified as to make it applicable to diluted magnetic semiconductors. We calculate the effective g factors and effective masses in ${\mathrm{Pb}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Mn}}_{\mathit{x}}$Te and ${\mathrm{Pb}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Mn}}_{\mathit{x}}$Se using a k⋅π band model developed and used previously for nonmagnetic ternary semiconductors by us. It is found that, while the exchange interaction between the conduction electrons and the magnetic impurities contributes significantly to the effective g factor, the exchange effects are marginal in the case of effective masses. Both quantities are calculated for the band edges, as well as for different carrier concentrations, as functions of magnetic-impurity concentration. The calculated results and trends obtained are in overall agreement with experimental results where available. The expression for the effective g factor derived is general in the sense that it can be applied to other diluted magnetic semiconductors with suitable modifications.

• Received 13 November 1992

DOI:https://doi.org/10.1103/PhysRevB.47.9319