Electronic-structure investigations of siloxenic clusters and films

Mark R. Pederson, Warren E. Pickett, and Steven C. Erwin
Phys. Rev. B 48, 17400 – Published 15 December 1993
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Abstract

Calculations on two forms of siloxenic clusters and periodic films have been performed to address the unusual luminescence in porous silicon and to further investigate how the optical gap varies as a function of hydroxyl- or hydrogen-passivator concentration. Within conventional approximations to the density functional theory, our optimized cluster calculations confirm that low-dimensional siloxenic complexes, of stoichiometry [Si]:[O]:[H] = 2:1:2, are most stable when the oxygen atoms form bridging bonds with pairs of silicon atoms. To aid in experimental characterization of siloxenic films, we present equilibrium geometries, electronic structures, chemically induced core-level shifts, and joint densities of states for two forms of siloxenic clusters.

  • Received 17 May 1993

DOI:https://doi.org/10.1103/PhysRevB.48.17400

©1993 American Physical Society

Authors & Affiliations

Mark R. Pederson and Warren E. Pickett

  • Complex Systems Theory Branch, Naval Research Laboratory, Washington, D.C. 20375

Steven C. Erwin

  • Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104

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Vol. 48, Iss. 23 — 15 December 1993

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