Optically active erbium centers in silicon

H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R. J. Wilson, and B. J. Sealy
Phys. Rev. B 54, 2532 – Published 15 July 1996
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Abstract

The intra-4f transition close to 1.54 μm of Er implanted into Si shows rich fine structure due to the crystal field of different defect types. Making use of the influence of implantation and annealing parameters, additional doping, temperature, and excitation power, we identify groups of lines belonging to different Er-related, optically active defects: the isolated interstitial Er, axial symmetry Er complexes with oxygen, and Er complex centers containing residual radiation defects. We show that the exciton binding energies as well as nonradiative quenching rates differ for different Er centers. Under optimum annealing conditions, the isolated interstitial Er has the highest photoluminescence yield at temperatures above 100 K. © 1996 The American Physical Society.

  • Received 28 March 1996

DOI:https://doi.org/10.1103/PhysRevB.54.2532

©1996 American Physical Society

Authors & Affiliations

H. Przybylinska

  • Institut für Experimentalphysik, Johannes-Kepler-Universitat, A-4040 Linz-Auhof, Austria
  • Institute of Physics, Polish Academy of Sciences, PL-02 668 Warsaw, Poland

W. Jantsch

  • Institut für Experimentalphysik, Johannes-Kepler-Universitat, A-4040 Linz-Auhof, Austria

Yu. Suprun-Belevitch

  • Institut für Experimentalphysik, Johannes-Kepler-Universitat, A-4040 Linz-Auhof, Austria
  • Belarussian State University, 220050 Minsk, Belarus

M. Stepikhova

  • Institut für Experimentalphysik, Johannes-Kepler-Universitat, A-4040 Linz-Auhof, Austria
  • State University, 603600 Nizhny Novgorod, Russia

L. Palmetshofer and G. Hendorfer

  • Institut für Experimentalphysik, Johannes-Kepler-Universitat, A-4040 Linz-Auhof, Austria

A. Kozanecki

  • Institute of Physics, Polish Academy of Sciences, PL-02 668 Warsaw, Pol
  • and Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom

R. J. Wilson and B. J. Sealy

  • Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom

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Vol. 54, Iss. 4 — 15 July 1996

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