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Nucleation and growth of Si nanowires from silicon oxide

N. Wang, Y. H. Tang, Y. F. Zhang, C. S. Lee, and S. T. Lee
Phys. Rev. B 58, R16024(R) – Published 15 December 1998
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Abstract

Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles (the nuclei of nanowires). Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high density of defects and a Si oxide shell. A growth mechanism was proposed based on the microstructure and different morphologies of the Si nanowires observed.

  • Received 18 August 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R16024

©1998 American Physical Society

Authors & Affiliations

N. Wang, Y. H. Tang, Y. F. Zhang, C. S. Lee, and S. T. Lee*

  • Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong, China

  • *Author to whom correspondence should be addressed. Electronic address: APANNALE@cityu.edu.hk

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Issue

Vol. 58, Iss. 24 — 15 December 1998

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