Band structure and its temperature dependence for type-III HgTe/Hg1xCdxTe superlattices and their semimetal constituent

C. R. Becker, V. Latussek, A. Pfeuffer-Jeschke, G. Landwehr, and L. W. Molenkamp
Phys. Rev. B 62, 10353 – Published 15 October 2000
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Abstract

Intersubband transitions in HgTe/Hg1xCdxTe superlattices and their dependence on temperature have been investigated for a large number of superlattices with widely different parameters. It has been shown by means of the envelope function approximation using the full 8×8 Kane Hamiltonian, that the valence band offset is primarily responsible for the separation between the H1E1 and L1E1 intersubband transition energies of semiconducting HgTe/Hg1xCdxTe superlattices with a normal band structure. To a good approximation, all other relevant superlattice parameters have little or no effect on this energy difference. This leads to an unequivocal determination of the valence band offset between HgTe and CdTe Λ which is 570±60meV at 5 K for both the (001) and the (112)B orientations. The temperature dependence of both intersubband transition energies can only be explained by the following conditions: Λ is also temperature dependent as expressed by dΛ/dT=0.40±0.04meV/K; the anisotropic heavy hole effective mass has a significant temperature dependence; and Eg(HgTe,300K)=160±5meV which is appreciably lower than the extrapolated values found in the literature.

  • Received 15 March 2000

DOI:https://doi.org/10.1103/PhysRevB.62.10353

©2000 American Physical Society

Authors & Affiliations

C. R. Becker*, V. Latussek, A. Pfeuffer-Jeschke, G. Landwehr, and L. W. Molenkamp

  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

  • *Email: becker@physik.uni-wuerzburg.de

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Vol. 62, Iss. 15 — 15 October 2000

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