Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi, Chang-Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, and Eli Yablonovitch
Phys. Rev. B 66, 153305 – Published 4 October 2002
PDFExport Citation

Abstract

Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi’s golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW’s placed closer to the surface metal coating.

  • Received 28 June 2002

DOI:https://doi.org/10.1103/PhysRevB.66.153305

©2002 American Physical Society

Authors & Affiliations

Arup Neogi*, Chang-Won Lee, and Henry O. Everitt

  • Department of Physics, Duke University, Durham, North Carolina 27708

Takamasa Kuroda and Atsushi Tackeuchi

  • Department of Applied Physics, Waseda University, Okubo 3-4-1, Shinjuku, Tokyo 169-8555, Japan

Eli Yablonovitch

  • Department of Electrical Engineering, University of California, Los Angeles, California 90095

  • *Email address: arup@phy.duke.edu

References (Subscription Required)

Click to Expand
Issue

Vol. 66, Iss. 15 — 15 October 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×