Electron–longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures

C. Becker, A. Vasanelli, C. Sirtori, and G. Bastard
Phys. Rev. B 69, 115328 – Published 23 March 2004
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Abstract

Calculations of electron–longitudinal optical phonon scattering rates between Landau levels in semiconductor heterostructures with a magnetic field applied parallel to the direction of confinement are reported. We have found that the scattering rate shows strong oscillations as a function of the applied field, depending on the configuration of the energy states in the structure. In the limit B0, the expressions for the intersubband scattering rate between Landau levels reduce to those obtained in the case of two-dimensional subbands at B=0T.

  • Received 7 November 2003

DOI:https://doi.org/10.1103/PhysRevB.69.115328

©2004 American Physical Society

Authors & Affiliations

C. Becker, A. Vasanelli, and C. Sirtori*

  • Laboratoire “Matériaux et Phénomènes Quantiques,” Université Denis Diderot Paris VII, 2, Place Jussieu, 75005 Paris, France

G. Bastard

  • Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris

  • *Electronic address: carlo.sirtori@thalesgroup.com

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Issue

Vol. 69, Iss. 11 — 15 March 2004

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