Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

Marc Kastner, David Adler, and H. Fritzsche
Phys. Rev. Lett. 37, 1504 – Published 29 November 1976
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Abstract

A model is presented for the structure and properties of active centers in lone-pair semiconductors, based on the possibility of unique bonding configurations which can arise from the presence of nonbonding orbitals. It is shown that the lowest-energy neutral center is unstable towards the creation of different positively and negatively charged centers, thus resulting in a negative effective correlation energy. These centers yield gap states which explain the unusual properties of lone-pair semiconductors.

  • Received 13 May 1976

DOI:https://doi.org/10.1103/PhysRevLett.37.1504

©1976 American Physical Society

Authors & Affiliations

Marc Kastner* and David Adler

  • Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

H. Fritzsche

  • Department of Physics and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637

  • *Also Department of Physics.
  • Also Department of Electrical Engineering and Computer Science.

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Issue

Vol. 37, Iss. 22 — 29 November 1976

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