Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

D. J. Eaglesham and M. Cerullo
Phys. Rev. Lett. 64, 1943 – Published 16 April 1990
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Abstract

We show that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free. Island formation in true SK growth should be driven by strain relaxation in large, dislocated islands. Coherent SK growth is explained in terms of elastic deformation around the islands, which partially accommodates mismatch. The limiting critical thickness, hc, of coherent SK islands is shown to be higher than that for 2D growth. We demonstrate growth of dislocation-free Ge islands on Si to a thickness of ≊500 Å, 50×higher than hc for 2D Ge/Si epitaxy.

  • Received 27 December 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.1943

©1990 American Physical Society

Authors & Affiliations

D. J. Eaglesham and M. Cerullo

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

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Vol. 64, Iss. 16 — 16 April 1990

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