Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering

V. Lemos, E. Silveira, J. R. Leite, A. Tabata, R. Trentin, L. M. R. Scolfaro, T. Frey, D. J. As, D. Schikora, and K. Lischka
Phys. Rev. Lett. 84, 3666 – Published 17 April 2000
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Abstract

The emission of light in the blue-green region from cubic InxGa1xN alloys grown by molecular beam epitaxy is observed at room temperature and 30K. By using selective resonant Raman spectroscopy (RRS) we demonstrate that the emission is due to quantum confinement effects taking place in phase-separated In-rich quantum dots formed in the layers. RRS data show that the In content of the dots fluctuates across the volume of the layers. We find that dot size and alloy fluctuation determine the emission wavelengths.

  • Received 26 October 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.3666

©2000 American Physical Society

Authors & Affiliations

V. Lemos*

  • Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, 13083-970 Campinas-SP, Brazil

E. Silveira, J. R. Leite, A. Tabata, R. Trentin, and L. M. R. Scolfaro

  • Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, 05315-970 São Paulo-SP, Brazil

T. Frey, D. J. As, D. Schikora, and K. Lischka

  • Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany

  • *Email address: volia@ifi.unicamp.br

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Vol. 84, Iss. 16 — 17 April 2000

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