Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

Sylvain David; Moustapha El Kurdi; Philippe Boucaud; Cecile Kammerer; Xiang Li; Sebastien Sauvage; Vinh Le Thanh; Isabelle Sagnes; Daniel Bouchier; Jean-Michel Lourtioz

doi:10.1117/12.546572

15 September 2004 Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

Sylvain David, Moustapha El Kurdi, Philippe Boucaud, Cecile Kammerer, Xiang Li, Sebastien Sauvage, Vinh Le Thanh, Isabelle Sagnes, Daniel Bouchier, Jean-Michel Lourtioz

Author Affiliations +

Proceedings Volume 5450, Photonic Crystal Materials and Nanostructures; (2004) https://doi.org/10.1117/12.546572
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

Silicon is the basic material for the microelectronics industry. The predicted limits for electrical interconnects in electronic circuits favor the development of alternative solutions such as optical interconnects to transfer information. The silicon-based components are an alternative to realise these interconnections, providing that high speed and high efficiency integrated optoelectronic devices can be realized. In this work, we have fabricated two-dimensional photonic crystal (PC) microcavities on silicon-on-insulator (SOI). The samples contain self-assembled Ge/Si islands deposited in the upper silicon layer by chemical vapor deposition. The silicon layer thickness measures 0.3 mm. The photonic crystals consist of triangular lattices of air holes etched in the upper silicon layer of the SOI substrate. The period lattice measures 0.5 μm and the drilled holes had diameters between 0.3 and 0.45 μm. These structures exhibit a forbidden band around 1.3 - 1.5 μm in TE polarisation. Different photonic crystal hexagonal microcavities were processed and the optical properties are probed at room temperature with the Ge/Si island photoluminescence. Quality factors larger than 200 are measured for hexagonal microcavities. On the one hand, the presence of the PC improves the vertical extraction of light, and on the other hand, we show that a significant enhancement of the Ge/Si island photoluminescence (x 100) can be achieved in the 1.3 - 1.55 μm spectral region using the microcavities. These attractive results should allow to realise efficient light emitting-diodes in the near infrared.

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Sylvain David, Moustapha El Kurdi, Philippe Boucaud, Cecile Kammerer, Xiang Li, Sebastien Sauvage, Vinh Le Thanh, Isabelle Sagnes, Daniel Bouchier, and Jean-Michel Lourtioz "Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); https://doi.org/10.1117/12.546572

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