Abstract
Size distribution of Ge islands formed in the course of Ge heteroepitaxy on Si(111) was studied by scanning tunneling microscopy in experiments of two types: (i) conventional molecular beam epitaxy (MBE) and (ii) pulsed (0.5 s) irradiation with Ge ions of energy ≃200 eV at instants of time corresponding to a filling degree >0.5 for each monolayer. Experiments were performed at a temperature of 350°C. The pulsed ion-beam irradiation during heteroepitaxy leads to a decrease in the average size of Ge islands, an increase in their concentration, and a decrease in the root-mean-square deviation from the mean, as compared to the analogous values in conventional MBE experiments.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 5, 2001, pp. 296–299.
Original Russian Text Copyright © 2001 by Dvurechenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Zinov’ev, Smagina.
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Dvurechenskii, A.V., Zinov’ev, V.A. & Smagina, Z.V. Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si. Jetp Lett. 74, 267–269 (2001). https://doi.org/10.1134/1.1417163
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DOI: https://doi.org/10.1134/1.1417163