Abstract
Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 79, No. 7, 2004, pp. 411–415.
Original Russian Text Copyright © 2004 by Dvurechenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Smagina, Zinov’ev, Armbrister, Volodin, Efremov.
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Dvurechenskii, A.V., Smagina, Z.V., Zinov’ev, V.A. et al. Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy. Jetp Lett. 79, 333–336 (2004). https://doi.org/10.1134/1.1765177
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DOI: https://doi.org/10.1134/1.1765177