Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions
The performances of silicon junctionless nanowire transistors are evaluated in terms of short-channel effects, current drive, and gate capacitance. These devices are very easy to make, since there is no gradient of doping concentration in the nanowires. The physics of the device is
explored and experimental results presented. Junctionless devices are shown to have smaller short-channel effects than inversion-mode transistors with junctions. Comparison of carrier transport in the channel is made between junctionless nanowires and inversion-mode multigate field-effect
transistors, and the benefits/drawbacks of bulk transport versus surface transport are addressed.
Keywords: FINFET; MOSFET; MULTIGATE TRANSISTOR; NANOWIRE
Document Type: Research Article
Publication date: 01 June 2011
- Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites
Receive new issue alert- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content