Abstract
As semiconductor devices shrink in size, the challenge of characterisation of their dopant distributions intensifies. Scanning electron microscopy (SEM) has been proposed as a suitable technique to overcome this challenge. However, current low-voltage (LV) SEMs are incapable of the probe sizes required for nano-scale dopant mapping, but the recently commercialised helium ion microscope (HeIM) is capable of probe sizes of 0.25 nm; a significant improvement over LVSEM. This paper discusses the dopant contrast mechanism in the HeIM and is the first demonstration of nano-scale, quantitative dopant mapping in the HeIM.