Fabrication of Ga2O3 thin films by aqueous solution deposition

Yutaka OHYA; Jyunya OKANO; Yuki KASUYA; Takayuki BAN

doi:10.2109/jcersj2.117.973

Papers

Fabrication of Ga₂O₃ thin films by aqueous solution deposition

Yutaka OHYA, Jyunya OKANO, Yuki KASUYA, Takayuki BAN

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Keywords: Ga₂O₃ thin film, Aqueous solution deposition, Electrical resistivity, Microstructure, Optical property

JOURNAL FREE ACCESS

2009 Volume 117 Issue 1369 Pages 973-977

DOI https://doi.org/10.2109/jcersj2.117.973

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Abstract

Ga₂O₃ thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga₂O₃ phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 10⁷ Ω cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate.

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