Skip to main content
SpringerLink
Log in

Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures

  • Proceedings of the XII All-Russia Seminar “The Wave Phenomena in Inhomogeneous Media”
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 100 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.064 μm. The PL an RS intensities were found to increase strongly for the samples with Si nanowires in comparison with corresponding values of c-Si substrate. The effect is explained by an increase of the lifetime of photons in silicon nanowire structures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Cui, Y., Lauhon, L.J., Gudiksen, M.S., et al., Appl. Phys. Lett., 2001, vol. 78, p. 2214.

    Article  ADS  Google Scholar 

  2. John, S., Phys. Rev. Lett., 1987, vol. 58, p. 2486.

    Article  ADS  Google Scholar 

  3. Chu, A.-Sh., Zaidi, S.H., and Brueck, S.R.J., Appl. Phys. Lett., 1993, vol. 63, p. 905.

    Article  ADS  Google Scholar 

  4. Elwenspoek, M. and Jansen, H.V. Silicon Micromachining, Cambridge: Univ. Press, 1998.

    Google Scholar 

  5. Zaidi, S.H., Chu, A.-Sh., and Brueck, S.R.J., Appl. Phys. Lett., 1996, vol. 80, p. 6997.

    Google Scholar 

  6. Boyraz, O. and Jalali, B., Opt. Express, 2004, vol. 12, p. 5269.

    Article  ADS  Google Scholar 

  7. Dimitropoulos, D., Fathpour, S., and Jalali, B., Appl. Phys. Lett., 2005, vol. 87, p. 261108.

    Article  ADS  Google Scholar 

  8. Mamichev, D.A., Timoshenko, V. Yu., Zoteyev, A.V., et al., Phys. Status Solidi B, 2009, vol. 246, p. 173.

    Article  ADS  Google Scholar 

  9. Sivakov, V., et al., J. Phys. Chem. C, 2010, vol. 114, p. 3798.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physics Department, Moscow State University, Moscow, 119991, Russia

    K. A. Gonchar, L. A. Golovan’ & V. Yu. Timoshenko

  2. Institute of Photonic Technology, Jena, Germany

    V. A. Sivakov & S. Christiansen

  3. Max Planck Institute for the Science of Light, Erlangen, Germany

    S. Christiansen

Authors
  1. K. A. Gonchar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. A. Golovan’
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. Yu. Timoshenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. A. Sivakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. Christiansen
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K. A. Gonchar.

Additional information

Original Russian Text © K.A. Gonchar, L.A. Golovan’, V.Yu. Timoshenko, V.A. Sivakov, S. Christiansen, 2010, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2010, Vol. 74, No. 12, pp. 1782–1784.

About this article

Cite this article

Gonchar, K.A., Golovan’, L.A., Timoshenko, V.Y. et al. Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures. Bull. Russ. Acad. Sci. Phys. 74, 1712–1714 (2010). https://doi.org/10.3103/S1062873810120208

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1062873810120208

Keywords

Search

Navigation