Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes

Jens Eriksson; Ming Hung Weng; Fabrizio Roccaforte; Filippo Giannazzo; Stefano Leone; Vito Raineri

doi:10.4028/www.scientific.net/SSP.156-158.331

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Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
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HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Demonstration of Defect-Induced Limitations on the...

Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes

Abstract:

The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Pages:

331-336

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.156-158.331

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Online since:

October 2009

Authors:

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Keywords:

3C-SiC, Conductive AFM, Schottky Contact, SiC Heterostructure

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References

[1] M. Soueidan and G. Ferro: Advanced Functional Materials Vol. 16 (2006), p.975.

Google Scholar

[2] A.A. Lebedev: Semicond. Sci. Technol. Vol. 21 (2006), p. R17.

Google Scholar

[3] K.M. Speer, P.G. Neudeck, M.A. Crimp, C. Burda, and P. Pirouz: Phys. Stat. Sol. A Vol. 204 (2007), p.2216.

DOI: 10.1002/pssa.200675446

Google Scholar

[4] J.I. Noh, K.S. Nahm, K.C. Kim, M.A. Capano: Solid-State Electronics Vol. 46 (2002), p.2273.

Google Scholar

[5] D.R. Lide: CRC Handbook of Chemistry and Physics, 82nd Edition (CRC Press, Boca Raton, USA 2001).

Google Scholar

[6] M. Satoh and H. Matsuo: Mater. Sci. Forum Vol. 556 (2006), p.705.

Google Scholar

[7] S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda: Appl. Phys. Lett. Vol. 46 (1985), p.766.

Google Scholar

[8] S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén, Mater. Sci. Forum Vols. 600-603 (2009), p.107.

Google Scholar

[9] F. Giannazzo, P. Fiorenza, and V. Raineri, in: Applied Scanning Probe Methods, X, edited by B. Bhushan, H. Fuchs, and M. Tomitori (Springer, Berlin, 2008).

Google Scholar

[10] F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, and E. Zanoni: J. Appl. Phys. Vol. 93 (2003), p.9137.

Google Scholar

[11] A. Severino, M. Camarda, G. Condorelli, L.M.S. Perdicaro, R. Anzalone, M. Mauceri, A. La Magna, and F. La Via, Appl. Phys. Lett. Vol. 94 (2009), p.101907.

DOI: 10.1063/1.3085769

Google Scholar

[12] D.K. Schröder: Semiconductor Material and Device Characterization, Third Edition (WileyIEEE press, 2006).

Google Scholar

[13] R.T. Tung: Phys. Rev. B, Vol. 45 (1992), p.13509.

Google Scholar